Evaluation of Ferroelectric/Silicon Interface State Density in Ferroelectric-Gate Transistors Using a Charge Pumping Method

Author: Aizawa Koji  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.293, Iss.1, 2003-01, pp. : 119-126

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract