The simple analysis of the Burstein-Moss shift in degenerate n-type semiconductors

Author： Chakraborty P.K.   Datta G.C.   Ghatak K.P.  

Publisher： Elsevier

ISSN： 0921-4526

Source： Physica B, Vol.339, Iss.4, 2003-12, pp. : 198-203

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Observation of the Burstein-Moss shift in heavily Te-doped In 0.5 Ga 0.5 P layers grown by liquid phase epitaxy

By Yoon I.T.   Ji T.S.   Park H.L.  

Thin Solid Films, Vol. 302, Iss. 1, 1997-06 ,pp. : 270-274

Elsevier

Access to resources Recommend Favorite

Tetraazabenzodifluoranthene Diimides: Building Blocks for Solution‐Processable n‐Type Organic Semiconductors

By  

ANGEWANDTE CHEMIE INTERNATIONAL EDITION, Vol. 52, Iss. 21, 2013-05 ,pp. : 5513-5517

John Wiley & Sons Inc

Access to resources Recommend Favorite

Cyclobuteno[60]fullerenes as Efficient n‐Type Organic Semiconductors

By  

CHEMISTRY - A EUROPEAN JOURNAL, Vol. 22, Iss. 38, 2016-09 ,pp. : 13627-13631

John Wiley & Sons Inc

Access to resources Recommend Favorite

Optoelectronic and conductivity of ᴫ‐conjugated polymers based on phenylenevinylene, 1,3,4‐thiadiazole and thiophene: Suitable candidates for n‐type organic semiconductors

By  

JOURNAL OF PHYSICAL ORGANIC CHEMISTRY (ELECTRONIC), Vol. 31, Iss. 2, 2018-02 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Simple Method for the Determination of the Type of Charge Carriers in Semiconductors

By  

Materials Science Forum, Vol. 2016, Iss. 851, 2016-05 ,pp. : 179-182

Trans Tech Publications

Access to resources Recommend Favorite