Author： Byun Chang Woo Son Se Wan Lee Yong Woo Joo Seung Ki
Publisher： American Scientific Publishers
ISSN： 1533-4899
Source： Journal of Nanoscience and Nanotechnology, Vol.13, Iss.10, 2013-10, pp. : 7046-7049
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Abstract
In this study, we studied the effect of the electrical stress on the on-current of metal-induced laterally crystallized poly-Si TFTs. It was found that the electrical performance of polycrystalline silicon thin-film transistors (TFTs) is greatly affected by the electrical stress. Under the electrical stress condition, the drain current increases due to hot-electron trap at the drain junction. The computer simulation revealed the fact that the improvement mechanism can be reproduced by effective channel length shortening. It turns out that analysis of the capacitance and output characteristics supports this model.
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