Memory Characteristics of Doubly Stacked Nano-Floating Gate Memory Devices with Channels of Single ZnO Nanowires

Author: Kim Sungsu   Cho Kyoungah   Kwak Kiyeol   Kim Sangsig  

Publisher: American Scientific Publishers

ISSN: 1533-4899

Source: Journal of Nanoscience and Nanotechnology, Vol.13, Iss.9, 2013-09, pp. : 6196-6198

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