Threshold Voltage Variation of Nanoscale Strained Si/Si 1-x Ge x MOSFETs in the Presence of Punch Through Effect

Author: Engsiew Kang   Anwar Sohail   Ismail Razali  

Publisher: American Scientific Publishers

ISSN: 1546-1963

Source: Journal of Computational and Theoretical Nanoscience, Vol.10, Iss.10, 2013-10, pp. : 2366-2370

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Abstract