![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Schaffler F.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.321, Iss.1, 1998-05, pp. : 1-10
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
High-speed transport in Si/Si 1-x-y Ge x C y heterostructures
By Muhlberger M. Schelling C. Sandersfeld N. Seyringer H. Schaffler F.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE
By Joelsson K.B. Ni W.-X. Pozina G. Hultman L. Hansson G.V.
Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Loo R. Caymax M. Simoen E. Howard D. Goryll M. Klaes D. Vescan L. Gravesteijn D. Pettersson H. Zhang X.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :