High-speed transport in Si/Si 1-x-y Ge x C y heterostructures

By Muhlberger M.   Schelling C.   Sandersfeld N.   Seyringer H.   Schaffler F.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 306-311

Elsevier

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Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

Elsevier

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Comparison of Si/Si 1-x-y Ge x C y and Si/Si 1-y C y heterojunctions grown by rapid thermal chemical vapor deposition

By Hoyt J.L.   Mitchell T.O.   Rim K.   Singh D.V.   Gibbons J.F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 41-46

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Quantification of germanium and boron in heterostructures Si/Si 1-x Ge x /Si by SIMS

By Prudon G.   Gautier B.   Dupuy J.C.   Dubois C.   Bonneau M.   Delmas J.   Vallard J.P.   Bremond G.   Brenier R.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 54-58

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Influence of grown-in defects on the optical and electrical properties of Si/Si 1-x Ge x /Si heterostructures

By Loo R.   Caymax M.   Simoen E.   Howard D.   Goryll M.   Klaes D.   Vescan L.   Gravesteijn D.   Pettersson H.   Zhang X.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 227-231

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