Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS

Author： Daoxun Wu   Lingli Jiang   Hang Fan   Jian Fang   Bo Zhang  

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.34, Iss.2, 2013-02, pp. : 24004-24008

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