Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Author： Acharyya Aritra   Banerjee Suranjana   Banerjee J.P.  

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.34, Iss.2, 2013-02, pp. : 24001-24012

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