Annealing of europium-implanted silicon by nanosecond ion-beam pulses

ISSN： 1362-3036

Source： Philosophical Magazine Letters, Vol.81, Iss.1, 2001-01, pp. : 29-38

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Recrystallization of amorphous ion-implanted silicon carbide after thermal annealing

By Miro S.

Philosophical Magazine Letters, Vol. 92, Iss. 11, 2012-11 ,pp. : 633-639

Taylor & Francis Ltd

Access to resources Recommend Favorite

Fabrication of Silicon/Germanium superlattice by ion-beam sputtering

By Sasaki K. Takahashi Y. Ikeda T. Hata T.

Vacuum, Vol. 66, Iss. 3, 2002-08 ,pp. : 457-462

Elsevier

Access to resources Recommend Favorite

Ion‐Beam Sculpting of Nanowires

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 12, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

By Calcagno L. Giorgis F. Makhtari A. Musumeci P. Reitano R.

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 539-546

Taylor & Francis Ltd

Access to resources Recommend Favorite

Patterning of nanometer-scale silicide structures on silicon by 'direct writing focus ion-beam implantation'

By Mitan M.M. Pivin D.P. Alford T.L. Mayer J.W.

Thin Solid Films, Vol. 411, Iss. 2, 2002-05 ,pp. : 219-224

Elsevier

Access to resources Recommend Favorite