Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures

Author: Meaudre R.   Meaudre M.  

Publisher: Taylor & Francis Ltd

ISSN: 1362-3036

Source: Philosophical Magazine Letters, Vol.82, Iss.5, 2002-05, pp. : 303-312

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