Thermally enhanced quantum efficiency in hydrogenated amorphous silicon p-i-n photodiodes studied by intensitymodulated photocurrent spectroscopy

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Philosophical Magazine B, Vol. 79, Iss. 2, 1999-02 ,pp. : 291-318

Taylor & Francis Ltd

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Electrical simulation of a p-i-n image sensor

By Martins J.   Fernandes M.   Vieira M.  

Vacuum, Vol. 64, Iss. 3, 2002-01 ,pp. : 307-313

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Influence of the transducer configuration on the p-i-n image sensor resolution

By Fernandes M.   Vieira M.   Martins J.   Louro P.   Macarico A.   Schwarz R.   Schubert M.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 65-68

Elsevier

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Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures

By Meaudre R.   Meaudre M.  

Philosophical Magazine Letters, Vol. 82, Iss. 5, 2002-05 ,pp. : 303-312

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Incorporation of amorphous and microcrystalline silicon in n-i-p solar cells

By van Veen M.K.   van der Werf C.H.M.   Rath J.K.   Schropp R.E.I.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 216-219

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