Indium segregation and reevaporation effects on the photoluminescence properties of highly strained In x Ga 1-x As/GaAs quantum wells

Author： Ilahi B.   Sfaxi L.   Bouzaene L.   Hassen F.   Maaref H.  

Publisher： Elsevier

ISSN： 1386-9477

Source： Physica E, Vol.17, Iss.unknown, 2003-04, pp. : 232-234

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