Author： Zu X. T. Sun K. Atzmon M. Wang L. M. You L. P. Wan F. R. Busby J. T. Was G. S. Adamson R. B.
Publisher： Taylor & Francis Ltd
ISSN： 1478-6443
Source： Philosophical Magazine, Vol.85, Iss.4-7, 2005-02, pp. : 649-659
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters
Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. :
The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Fretting wear characteristics of Zircaloy-4 tube
Wear, Vol. 219, Iss. 1, 1998-08 ,pp. :
Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :