Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|667-672
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 667-672
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters
Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. :
Access to resources
Recommend
Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Effects of Neutron and Electron Irradiation on 4H-SiC Diodes
Materials Science Forum, Vol. 2016, Iss. 840, 2016-02 ,pp. :