Characterization of porous silicon-on-insulator films prepared by anodic oxidation

By Lee C.H.   Yeh C.C.   Hwang H.L.   Hsu K.Y.J.  

Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. : 147-150

Elsevier

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Influence of arsenic in silicon on thermal oxidation rate

By Choi S.S.   Park M.J.   Chu W.K.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 271-274

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Influence of oxidation and carbon-containing contamination in the stabilization of the luminescence in porous silicon

By Guerrero-Lemus R.   Moreno J.D.   Martn-Palma R.J.   Ben-Hander F.   Martnez-Duart J.M.   Fierro J.L.G.   Gomez-Garrido P.  

Thin Solid Films, Vol. 354, Iss. 1, 1999-10 ,pp. : 34-37

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Influence of the oxidation process on the luminescence of HF-treated porous silicon

By Dittrich T.   Flietner H.   Timoshenko V.Y.   Kashkarov P.K.  

Thin Solid Films, Vol. 255, Iss. 1, 1995-01 ,pp. : 149-151

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Erratum: ''Characterization of porous silicon-on-insulator films prepared by anodic oxidation'' (Thin Solid Films (1996) 276 (147-150))

By Lee C.H.   Yeh C.C.   Hwang H.L.   Hsu K.Y.J.  

Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. : 334-334

Elsevier

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