A photoluminescence and X-ray diffraction analysis of InAlAs/InP heterostructures grown by molecular beam epitaxy

By Yoon S.F.   Miao Y.B.   Radhakrishnan K.   Swaminathan S.  

Thin Solid Films, Vol. 266, Iss. 2, 1995-10 ,pp. : 302-306

Elsevier

Access to resources Recommend Favorite

Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE

By Venger E.F.   Sadof'ev Y.G.   Semenova G.N.   Korsunskaya N.E.   Klad'ko V.P.   Shechovtsov L.V.   Semtsiv M.P.   Borkovskaya L.V.   Sapko S.Y.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 184-188

Elsevier

Access to resources Recommend Favorite

Defect-free strain relaxation in locally MBE-grown SiGe heterostructures

By Eisele I.   Rupp T.   Kaesen F.   Hansch W.   Hammerl E.   Gravesteijn D.J.   Schorer R.   Silveira E.   Abstreiter G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 27-32

Elsevier

Access to resources Recommend Favorite

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

By Du A.Y.   Li M.F.   Chong T.C.   Xu S.J.   Zhang Z.   Yu D.P.  

Thin Solid Films, Vol. 311, Iss. 1, 1997-12 ,pp. : 7-14

Elsevier

Access to resources Recommend Favorite

Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD

By Hellara J.   Hassen F.   Maaref H.   Souliere V.   Monteil Y.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 229-231

Elsevier

Access to resources Recommend Favorite