Properties of heavily phosphorous-doped c-Si deposited by mesh attached cathode-type r.f. glow discharge

Author: Hatanaka Y.   Jayatissa A.H.   Nakanishi Y.   Yamaguchi T.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.274, Iss.1, 1996-03, pp. : 113-119

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Abstract