Properties of heavily phosphorous-doped c-Si deposited by mesh attached cathode-type r.f. glow discharge

By Hatanaka Y.   Jayatissa A.H.   Nakanishi Y.   Yamaguchi T.  

Thin Solid Films, Vol. 274, Iss. 1, 1996-03 ,pp. : 113-119

Elsevier

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Roughness and deposition mechanism of DLC films prepared by r.f. plasma glow discharge

By Ali A.   Hirakuri K.K.   Friedbacher G.  

Vacuum, Vol. 51, Iss. 3, 1998-11 ,pp. : 363-368

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Structure of poly-Si films obtained by laser annealing

By Carluccio R.   Cina S.   Fortunato G.   Friligkos S.   Stoemenos J.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 57-60

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Chemical bonding in thin Ge/C films deposited from tetraethylgermanium in an r.f. glow discharge - An FTIR study

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Thin Solid Films, Vol. 256, Iss. 1, 1995-02 ,pp. : 31-38

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13 C nuclear magnetic resonance signals of Ge/C films deposited from tetraethylgermanium in an r.f. glow discharge

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