AlN thin films prepared by ion beam induced chemical vapour deposition

By Sanchez-Lopez J.C.   Contreras L.   Fernandez A.   Gonzalez-Elipe A.R.   Martin J.M.   Vacher B.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 100-104

Elsevier

Access to resources Recommend Favorite

Stress generation during ion beam-assisted pulsed laser deposition of thin AlN films

By Six S.   Rauschenbach B.  

Thin Solid Films, Vol. 415, Iss. 1, 2002-08 ,pp. : 285-289

Elsevier

Access to resources Recommend Favorite

A model of AlN layer formation during ion nitriding of Al

By Dimitrov V.I.  

Applied Physics A, Vol. 79, Iss. 7, 2004-11 ,pp. : 1829-1832

Springer Publishing Company

Access to resources Recommend Favorite

Characteristics of GaN epilayer grown on Al 2 O 3 with AlN buffer layer by molecular beam epitaxy

By Jeon H.C.   Lee H.S.   Si S.M.   Jeong Y.S.   Na J.H.   Park Y.S.   Kang T.W.   Eung Oh J.  

Current Applied Physics, Vol. 3, Iss. 4, 2003-06 ,pp. : 385-388

Elsevier

Access to resources Recommend Favorite

Biaxial strain in Al x Ga 1-x N/GaN layers deposited on 6H-SiC

By Perry W.G.   Bremser M.B.   Zheleva T.   Linthicum K.J.   Davis R.F.  

Thin Solid Films, Vol. 324, Iss. 1, 1998-07 ,pp. : 107-114

Elsevier

Access to resources Recommend Favorite