Reconstruction of the Si-terminated -SiC(100) surface

By Pizzagalli L.   Joachim C.   Mayne A.   Dujardin G.   Semond F.   Douillard L.   Soukiassian P.  

Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. : 136-139

Elsevier

Access to resources Recommend Favorite

Ion irradiation induced bubble relaxation in SiC

By Hua Wei   Yao Shu-De   Theodore N. David   Martin Michael   Aitkaliyeva Assel   Shao Lin  

Radiation Effects and Defects in Solids, Vol. 165, Iss. 5, 2010-05 ,pp. : 388-395

Taylor & Francis Ltd

Access to resources Recommend Favorite

Strain relaxation in ultrathin epitaxial films of -FeSi 2 on unstrained and strained Si(100) surfaces

By Peale D.R.   Haight R.   Legoues F.K.  

Thin Solid Films, Vol. 264, Iss. 1, 1995-08 ,pp. : 28-39

Elsevier

Access to resources Recommend Favorite

Designing the Si(100) conversion into SiC(100) by Ge

By  

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 7, Iss. 2, 2010-02 ,pp. : 141-144

John Wiley & Sons Inc

Access to resources Recommend Favorite

Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 1003-1006

Trans Tech Publications

Access to resources Recommend Favorite