Publisher： John Wiley & Sons Inc
E-ISSN： 1610-1642|7|2|141-144
ISSN： 1862-6351
Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.7, Iss.2, 2010-02, pp. : 141-144
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Reconstruction of the Si-terminated -SiC(100) surface
By Pizzagalli L. Joachim C. Mayne A. Dujardin G. Semond F. Douillard L. Soukiassian P.
Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. :
Access to resources
Recommend
Multilayer relaxation features on (100) and (111) surfaces of -SiC
Thin Solid Films, Vol. 286, Iss. 1, 1996-09 ,pp. :
Growth mechanisms of SiGe on (111) and (100) Si substrates
By Gallas B. Berbezier I. Ronda A. Derrien J.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Growth of self-assembled homogeneous SiGe-dots on Si(100)
By Schittenhelm P. Abstreiter G. Darhuber A. Bauer G. Werner P. Kosogov A.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Epitaxial growth of Si 1-x-y Ge x C y film on Si(100) in a SiH 4 -GeH 4 -CH 3 SiH 3 reaction
By Ichikawa A. Hirose Y. Ikeda T. Noda
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :