Excitation dependence of photoluminescence linewidth in InAlAs grown on InP substrates by molecular beam epitaxy

By Yoon S.F.   Radhakrishnan K.   Du Q.  

Thin Solid Films, Vol. 295, Iss. 1, 1997-02 ,pp. : 310-314

Elsevier

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Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

By Yoon S.F.   Zheng H.Q.   Zhang P.H.   Mah K.W.   Ng G.I.  

Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 233-237

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Bistable diodes grown by silicon molecular beam epitaxy

By Zhu X.   Zheng X.   Pak M.   Tanner M.O.   Wang K.L.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 201-205

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Characteristics of GaN epilayer grown on Al 2 O 3 with AlN buffer layer by molecular beam epitaxy

By Jeon H.C.   Lee H.S.   Si S.M.   Jeong Y.S.   Na J.H.   Park Y.S.   Kang T.W.   Eung Oh J.  

Current Applied Physics, Vol. 3, Iss. 4, 2003-06 ,pp. : 385-388

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Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates

By Fujikura H.   Kihara M.   Hasegawa H.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 22-25

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