In-situ low-temperature (600 o C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth

Author: Kim H.-W.   Reif R.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.289, Iss.1, 1996-11, pp. : 192-198

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Abstract