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By Kim H.-W.   Reif R.  

Thin Solid Films, Vol. 289, Iss. 1, 1996-11 ,pp. : 192-198

Elsevier

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Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth

By Kim H.-w.   Zhou Z.-H.   Reif R.  

Thin Solid Films, Vol. 302, Iss. 1, 1997-06 ,pp. : 169-178

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In-situ low temperature cleaning of silicon surfaces using hydrogen atoms

By Crossley A.   Sofield C.J.   Sugden S.   Clampitt R.   Bradley C.  

Vacuum, Vol. 46, Iss. 7, 1995-07 ,pp. : 667-672

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Low-temperature growth of in situ phosphorus-doped silicon films: two-step growth utilizing amorphous silicon buffers

By Shim K.-H.   Kim H.-S.   Lee J.-Y.   Kang J.-Y.   Song M.K.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 185-188

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RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface

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Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 179-182

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