Rapid thermal annealing effects in CdTe (111) thin films grown on Si (100) substrates by molecular beam epitaxy

By Han M.S.   Ryu Y.S.   Song B.K.   Kang T.W.   Kim T.W.  

Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. : 196-199

Elsevier

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Improvement of the crystallinity of GaAs epitaxial layers grown on Si substrates assisted by electron beam irradiation

By Kang T.W.   Woo Y.D.   Kim T.W.  

Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 14-16

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Improvement of the crystallinity of a GaAs epitaxial film grown on a Si substrate using a Si/SiGe/Ge buffer layer

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Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 166-168

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

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Effect of growth temperature on the orientation of CdTe on GaAS prepared by molecular beam epitaxy

By Yin J.   Huang Q.   Zhou J.   Yin J.  

Thin Solid Films, Vol. 292, Iss. 1, 1997-01 ,pp. : 303-306

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