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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 241-244

Elsevier

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Residual strain and surface roughness of Si 1-x Ge x alloy layers grown by molecular beam epitaxy on Si(001) substrate

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 161-166

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Structural characterization of a UHV/CVD-grown SiGe HBT with graded base

By Dion M.   Houghton D.C.   Rowell N.L.   Perovic D.D.   Aers G.C.   Rolfe S.J.   Sproule G.I.   Phillips J.R.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 167-171

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Relaxed Si 0.7 Ge 0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

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Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue-green laser diodes

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Thin Solid Films, Vol. 360, Iss. 1, 2000-02 ,pp. : 195-204

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