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Doping and electrical characteristics of in-situ heavily B-doped Si 1-x-y Ge x C y films epitaxially grown using ultraclean LPCVD

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Optical characterization of thermally oxidized Si 1-x-y Ge x C y layers

By Cuadras A.   Garrido B.   Bonafos C.   Morante J.R.   Fonseca L.   Franz M.   Pressel K.  

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Hole mobilities in pseudomorphic Si 1-x-y Ge x C y alloy layers

By Duschl R.   Seeberger H.   Eberl K.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 336-339

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Comparison of Si/Si 1-x-y Ge x C y and Si/Si 1-y C y heterojunctions grown by rapid thermal chemical vapor deposition

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