Strain-compensated Si/Si 0.2 Ge 0.8 quantum cascade structures grown on Si 0.5 Ge 0.5 pseudo-substrates

By Mentese S.   Diehl L.   Muller E.   Sigg H.   Grutzmacher D.   Roch T.   Stangl J.   Bauer G.   Gennser U.   Sagnes I.   Campidelli Y.   Kermarrec O.   Bensahel D.   Faist J.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 613-617

Elsevier

Access to resources Recommend Favorite

Effective mass measurement in two-dimensional hole gas in strained Si 1-x-y Ge x C y / Si(100) modulation doped heterostructures

By Chang C.L.   Shukla S.P.   Pan W.   Venkataraman V.   Sturm J.C.   Shayegan M.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 51-54

Elsevier

Access to resources Recommend Favorite

Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities

By Hatakeyama T.   Tezuka T.   Sugiyama N.   Kurobe A.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 328-332

Elsevier

Access to resources Recommend Favorite

Enhanced phase stability and morphological stability of Ni(Si,Ge) on strained Si 0.8 Ge 0.2

By Seger J.   Zhang S.-L.  

Thin Solid Films, Vol. 429, Iss. 1, 2003-04 ,pp. : 216-219

Elsevier

Access to resources Recommend Favorite

Spin precession observation in quantum corrections to resistance of Si 0.7 Ge 0.3 /Si 0.2 Ge 0.8 heterostructure with 2DHG

By Andrievskii V.V.   Komnik Y.F.   Myronov M.   Mironov O.A.   Rozheshchenko A.   Whall T.E.  

Physica E, Vol. 18, Iss. 1, 2003-05 ,pp. : 145-146

Elsevier

Access to resources Recommend Favorite