Strain-compensated Si/Si 0.2 Ge 0.8 quantum cascade structures grown on Si 0.5 Ge 0.5 pseudo-substrates

By Mentese S.   Diehl L.   Muller E.   Sigg H.   Grutzmacher D.   Roch T.   Stangl J.   Bauer G.   Gennser U.   Sagnes I.   Campidelli Y.   Kermarrec O.   Bensahel D.   Faist J.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 613-617

Elsevier

Access to resources Recommend Favorite

Enhanced phase stability and morphological stability of Ni(Si,Ge) on strained Si 0.8 Ge 0.2

By Seger J.   Zhang S.-L.  

Thin Solid Films, Vol. 429, Iss. 1, 2003-04 ,pp. : 216-219

Elsevier

Access to resources Recommend Favorite

Relaxed Si 0.7 Ge 0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

By Wohl G.   Dudek V.   Graf M.   Kibbel H.   Herzog H.-J.   Klose M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 175-181

Elsevier

Access to resources Recommend Favorite

Effect of substrate temperature on the texture and structure of polycrystalline Si 0.7 Ge 0.3 films deposited on SiO 2 by molecular beam deposition

By Seung Kim H.   Yong Lee J.  

Thin Solid Films, Vol. 350, Iss. 1, 1999-08 ,pp. : 14-20

Elsevier

Access to resources Recommend Favorite

Ge-Si intermixing in Ge quantum dots on Si

By Boscherini F.   Capellini G.   Di Gaspare L.   De Seta M.   Rosei F.   Sgarlata A.   Motta N.   Mobilio S.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 173-175

Elsevier

Access to resources Recommend Favorite