Reactive ion etching of vapor phase deposited polyimide films in CF 4 /O 2 : Effect on surface morphology

By Popova K.   Spassova E.   Zhivkov I.   Danev G.  

Thin Solid Films, Vol. 274, Iss. 1, 1996-03 ,pp. : 31-34

Elsevier

Access to resources Recommend Favorite

Control of Cl 2 plasma by electron-beam-excited plasma and poly-Si etching

By Mikawa Y.   Miyano R.-i.   Inaguma J.-i.   Shiraki Y.   Mutsuga F.   Fujii M.   Ikezawa S.  

Vacuum, Vol. 51, Iss. 4, 1998-12 ,pp. : 531-535

Elsevier

Access to resources Recommend Favorite

Modeling etch rate and uniformity of oxide via etching in a CHF 3 /CF 4 plasma using neural networks

By Kim B.   Kwon K.-H.   Kwon S.-K.   Park J.-M.   Yoo S.W.   Park K.-S.   You I.-K.   Kim B.-W.  

Thin Solid Films, Vol. 426, Iss. 1, 2003-02 ,pp. : 8-15

Elsevier

Access to resources Recommend Favorite

Real dimensional simulation of SiO 2 etching in CF 4 +H 2 plasma

By Knizikevicius R.  

Vacuum, Vol. 65, Iss. 1, 2002-02 ,pp. : 101-108

Elsevier

Access to resources Recommend Favorite

Real dimensional simulation of anisotropic etching of silicon in CF 4 +O 2 plasma

By Knizikevicius R.   Galdikas A.   Grigonis A.  

Vacuum, Vol. 66, Iss. 1, 2002-06 ,pp. : 39-47

Elsevier

Access to resources Recommend Favorite