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Thin Solid Films, Vol. 381, Iss. 1, 2001-01 ,pp. : 22-30

Elsevier

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Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition

By Flewitt A.J.   Dyson A.P.   Robertson J.   Milne W.I.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 172-177

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A possible method for large area deposition of a-Si:H thin films using electron cyclotron resonance plasma-enhanced chemical vapor deposition

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Thin Solid Films, Vol. 295, Iss. 1, 1997-02 ,pp. : 67-72

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Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma

By Muta H.   Itagaki N.   Kawai Y.  

Vacuum, Vol. 66, Iss. 3, 2002-08 ,pp. : 209-214

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Effects of direct-current bias on the carbonization of Si(100) at low temperatures using electron cyclotron resonance chemical vapor deposition

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Thin Solid Films, Vol. 435, Iss. 1, 2003-07 ,pp. : 340-343

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