Growth temperature effect on the heteroepitaxy of InSb films on a Si(00l) substrate covered with Ge islands

By Mori M.   Nizawa Y.   Nishi Y.   Tambo T.   Tatsuyama C.  

Thin Solid Films, Vol. 333, Iss. 1, 1998-11 ,pp. : 60-64

Elsevier

Access to resources Recommend Favorite

Enhancement of thermal diffusion of delta-doped Sb in SiGe

By Nakagawa K.   Kojima H.   Sugii N.   Yamaguchi S.   Miyao M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 226-229

Elsevier

Access to resources Recommend Favorite

Improved growth morphology of Si-Ge-C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

By Croke E.T.   Hunter A.T.   Pettersson P.O.   Ahn C.C.   McGill T.C.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 105-111

Elsevier

Access to resources Recommend Favorite

Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots

By Portavoce A.   Volpi F.   Ronda A.   Gas P.   Berbezier I.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 164-168

Elsevier

Access to resources Recommend Favorite

High mobility -SiC epilayer prepared by low-pressure rapid thermal chemical vapor deposition on a (100) silicon substrate

By Hwang J.D.   Fang Y.K.   Song Y.J.   Yaung D.N.  

Thin Solid Films, Vol. 272, Iss. 1, 1996-01 ,pp. : 4-6

Elsevier

Access to resources Recommend Favorite