High mobility -SiC epilayer prepared by low-pressure rapid thermal chemical vapor deposition on a (100) silicon substrate

Author： Hwang J.D. Fang Y.K. Song Y.J. Yaung D.N.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.272, Iss.1, 1996-01, pp. : 4-6

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