Initial stage of SiC film growth on Si(111)7x7 and Si(100)2x1 surfaces using C 60 as a precursor studied by STM and HRTEM

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Hole-blocking characteristics of 2,4,6-triphenyl-1,3,5-triazine as a non-transporting filler material

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Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS

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Optical second-harmonic generation and photoemission from Al quantum wells on Si(111) 7x7

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Erratum to ''Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS'' - Thin Solid films 369 (2000) 29-32

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