Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS

By Rosei F.   Motta N.   Sgarlata A.   Capellini G.   Boscherini F.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 29-32

Elsevier

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Properties of optically active Si:Er and Si 1-x Ge x layers grown by the sublimation MBE method - [Thin Solid Films 369 (2000) 320-323]

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Thin Solid Films, Vol. 381, Iss. 1, 2001-01 ,pp. : 164-169

Elsevier

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Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

By Bolkhovityanov Y.B.   Gutakovskii A.K.   Mashanov V.I.   Pchelyakov O.P.   Revenko M.A.   Sokolov L.V.  

Thin Solid Films, Vol. 392, Iss. 1, 2001-07 ,pp. : 98-106

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Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology

By Sugiyama N.   Mizuno T.   Takagi S.   Koike M.   Kurobe A.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 199-202

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Electrochemical formation and properties of thin polyaniline films on Au(111) and p-Si(111)

By Komsiyska L.   Tsakova V.   Staikov G.  

Applied Physics A, Vol. 87, Iss. 3, 2007-06 ,pp. : 405-409

Springer Publishing Company

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