XPS study of the surface Fermi level of (NH 4 ) 2 S x -passivated GaAs(100) surface

By Szuber J.   Bergignat E.   Hollinger G.   Polakowska A.   Koscielniak P.  

Vacuum, Vol. 67, Iss. 1, 2002-09 ,pp. : 53-58

Elsevier

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Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

By Huang J.S.   Chen Z.   Luo X.D.   Xu Z.Y.   Ge W.K.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 13-17

Elsevier

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Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs

By Hullavarad S.S.   Nikesh V.V.   Sainkar S.R.   Ganesan V.   Mahamuni S.   Bhoraskar S.V.  

Thin Solid Films, Vol. 381, Iss. 1, 2001-01 ,pp. : 69-72

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Zn-induced features at the GaAs(110) surface: a first-principles study

By Ferraz A.C.   Miotto R.  

Vacuum, Vol. 67, Iss. 1, 2002-09 ,pp. : 31-35

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Brillouin scattering study of surface acoustic waves in indium-implanted GaAs

By Zuk J.   Clouter M.J.   Kulik M.   Romanek J.   Maczka D.  

Vacuum, Vol. 58, Iss. 2, 2000-08 ,pp. : 543-550

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