Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces

By Pages O.   Erguig H.   Wagner V.   Zaoui A.   Laurenti J.P.   Gueurts J.   Aourag H.   Aulombard R.L.   Certier M.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 381-385

Elsevier

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Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

By Kim T.W.   Jung M.   Lee D.U.   Oh E.   Lee S.D.   Jung H.D.   Kim M.D.   Kim J.R.   Park H.S.   Lee J.Y.  

Thin Solid Films, Vol. 298, Iss. 1, 1997-04 ,pp. : 187-190

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Stacking faults in pseudomorphic ZnSe-GaAs and latticematched ZnSe-In0.04 Ga0.96 As layers

By Bonard J-M.   Ganiere J-D.  

Philosophical Magazine Letters, Vol. 75, Iss. 4, 1997-04 ,pp. : 219-226

Taylor & Francis Ltd

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Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures

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Journal of Crystal Growth, Vol. 260, Iss. 3, 2004-01 ,pp. : 384-387

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In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry

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Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 12-15

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