Characterization of self-assembled Ge islands on Si(100) by atomic force microscopy and transmission electron microscopy

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 86-91

Elsevier

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Alignment of Ge three-dimensional islands on faceted Si(001) surfaces

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Elsevier

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Three-dimensional islands of Si and Ge formed on SiO 2 through crystallization and agglomeration from amorphous thin films

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Low-temperature conduction and electron interaction in amorphous Si–Ge films

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Spin Properties of Electrons in Low-Dimensional SiGe Structures

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