Critical dimensions for the formation of interfacial misfit dislocations of In 0.6 Ga 0.4 As islands on GaAs(001)

By Tillmann K.   Forster A.  

Thin Solid Films, Vol. 368, Iss. 1, 2000-06 ,pp. : 93-104

Elsevier

Access to resources Recommend Favorite

Defect formation during Zn diffusion in GaP and GaSb

By Jager Ch.   Jager W.   Bosker G.   Popping J.   Stolwijk N.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 80, Iss. 1, 2000-01 ,pp. : 1-7

Taylor & Francis Ltd

Access to resources Recommend Favorite

Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

By Bolkhovityanov Yu.B.   Deryabin A.S.   Gutakovskii A.K.   Sokolov L.V.  

Philosophical Magazine Letters, Vol. 91, Iss. 7, 2011-07 ,pp. : 458-464

Taylor & Francis Ltd

Access to resources Recommend Favorite

Immobilization of avidin on (001) GaAs surface

By Ding X.   Moumanis Kh.   Dubowski J.J.   Frost E.H.   Escher E.  

Applied Physics A, Vol. 83, Iss. 3, 2006-06 ,pp. : 357-360

Springer Publishing Company

Access to resources Recommend Favorite

Is High T C Possible in (Ga,Mn)N?: Monte Carlo Simulation vs. Mean Field Approximation

By Sato K.  

Journal of Superconductivity: Incorporating Novel Magnetism, Vol. 18, Iss. 1, 2005-02 ,pp. : 33-36

Springer Publishing Company

Access to resources Recommend Favorite