Growth morphology and misfit relaxation of MBE-grown In 0.6 G 0.4 As on GaAs(001)

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Thin Solid Films, Vol. 261, Iss. 1, 1995-06 ,pp. : 139-147

Elsevier

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Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

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Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 277-280

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Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

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Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures

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Islands and critical thickness of InAs grown by MBE on nominally- and misoriented GaAs substrates

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