Water absorption characteristics of fluorinated silicon oxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition using SiH 4 , SiF 4 and O 2

By Byun K.-M.   Lee W.-J.  

Thin Solid Films, Vol. 376, Iss. 1, 2000-11 ,pp. : 26-31

Elsevier

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Effect of N 2 O/SiH 4 ratio on the properties of low-temperature silicon oxide films from remote plasma chemical vapour deposition

By Rhee S.-W.   Park Y.-B.   Kang J.-K.  

Thin Solid Films, Vol. 280, Iss. 1, 1996-07 ,pp. : 43-50

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Effect of hydrogen dilution on the growth of nanocrystalline silicon films at high temperature by using plasma-enhanced chemical vapor deposition

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Thin Solid Films, Vol. 437, Iss. 1, 2003-08 ,pp. : 68-73

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Optical properties of silicon nanocrystallites in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition

By Milovzorov D.E.   Ali A.M.   Inokuma T.   Kurata Y.   Suzuki T.   Hasegawa S.  

Thin Solid Films, Vol. 382, Iss. 1, 2001-02 ,pp. : 47-55

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a-SiC x :H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications

By Jiang L.   Chen X.   Wang X.   Xu L.   Stubhan F.   Merkel K.-H.  

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