Homogeneous nucleation during crystallization of amorphous silicon produced by low-pressure chemical vapour deposition

By Kahn H.   He A. Q.   Heuer A. H.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 82, Iss. 1, 2002-01 ,pp. : 137-165

Taylor & Francis Ltd

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Properties of nitrogen doped silicon films deposited by low pressure chemical vapour deposition from disilane and ammonia

By Temple-Boyer P.   Jalabert L.   Couderc E.   Scheid E.   Fadel P.   Rousset B.  

Thin Solid Films, Vol. 414, Iss. 1, 2002-07 ,pp. : 13-17

Elsevier

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Electrical characterisation of thin silicon oxynitride films deposited by low pressure chemical vapour deposition

By Hajji B.   Temple-Boyer P.   Olivie F.   Martinez A.  

Thin Solid Films, Vol. 354, Iss. 1, 1999-10 ,pp. : 9-12

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Plasma-enhanced chemical vapour deposition of microcrystalline silicon: on the dynamics of the amorphous-microcrystalline interface by optical methods

By Summonte C.   Rizzoli R.   Desalvo A.   Zignani F.   Centurioni E.   Pinghini R.   Bruno G.   Losurdo M.   Capezzuto P.   Gemmi M.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 459-473

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Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

By Calcagno L.   Giorgis F.   Makhtari A.   Musumeci P.   Reitano R.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 539-546

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