Characteristics of electron traps in Si-doped Ga 0.51 In 0.49 P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures

Author： Besikci C.   Civan Y.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.338, Iss.1, 1999-01, pp. : 213-219

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electrical characteristics of low‐Mg‐doped p‐AlGaN and p‐InGaN Schottky contacts

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 1031-1037

John Wiley & Sons Inc

Access to resources Recommend Favorite

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

By Du A.Y.   Li M.F.   Chong T.C.   Xu S.J.   Zhang Z.   Yu D.P.  

Thin Solid Films, Vol. 311, Iss. 1, 1997-12 ,pp. : 7-14

Elsevier

Access to resources Recommend Favorite

Electronic transport in strained p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well

By Gunes Mustafa   Gumus Cebrail  

Philosophical Magazine, Vol. 94, Iss. 24, 2014-08 ,pp. : 2804-2811

Taylor & Francis Ltd

Access to resources Recommend Favorite

Electrical characteristics of a‐plane low‐Mg‐doped p‐GaN Schottky contacts

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 1024-1030

John Wiley & Sons Inc

Access to resources Recommend Favorite

Optical and structural properties of InGaP heterostructures

By Moriarty G.R.   Kildemo M.   Beechinor J.T.   Murtagh M.   Kelly P.V.   Crean G.M.   Bland S.W.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 244-248

Elsevier

Access to resources Recommend Favorite