Structural and optical properties of InP/GaAs strained heterostructures grown by metal-organic chemical vapor deposition

By Kim T.W.   Jung M.   Park T.H.   Cho J.W.   Park H.L.  

Thin Solid Films, Vol. 257, Iss. 1, 1995-02 ,pp. : 36-39

Elsevier

Access to resources Recommend Favorite

Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

By Kim T.W.   Jung M.   Lee D.U.   Oh E.   Lee S.D.   Jung H.D.   Kim M.D.   Kim J.R.   Park H.S.   Lee J.Y.  

Thin Solid Films, Vol. 298, Iss. 1, 1997-04 ,pp. : 187-190

Elsevier

Access to resources Recommend Favorite

Effect of thermal annealing on the structural and optical properties of CdTe(111)/GaAs(100) heterostructures

By Kang T.W.   Han M.S.   Kim M.D.   Kim T.W.  

Thin Solid Films, Vol. 310, Iss. 1, 1997-11 ,pp. : 132-137

Elsevier

Access to resources Recommend Favorite

Characteristics of electron traps in Si-doped Ga 0.51 In 0.49 P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures

By Besikci C.   Civan Y.  

Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 213-219

Elsevier

Access to resources Recommend Favorite

Influence of surface strain on the MOVPE growth of InGaP epitaxial layers

By Novák J.   Hasenöhrl S.   Vávra I.   Kučera M.  

Applied Physics A, Vol. 87, Iss. 3, 2007-06 ,pp. : 511-516

Springer Publishing Company

Access to resources Recommend Favorite