Fabrication and characterization of (1-x)SrBi 2 Ta 2 O 9 -xBi 3 TaTiO 9 layered structure solid solution thin films for ferroelectric random access memory (FRAM) applications

Author: Ryu S.O.   Tirumala S.   Joshi P.C.   Desu S.B.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.340, Iss.1, 1999-02, pp. : 53-61

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Abstract