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Elsevier

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Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching

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Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique

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Proximity-controlled silicon carbide etching in inductively coupled plasma

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Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 276-282

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Determination of trace impurities in tantalum powder and its compounds by inductively coupled plasma optical emission spectrometry using solvent extraction

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Journal of Analytical Chemistry, Vol. 61, Iss. 7, 2006-07 ,pp. : 641-643

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