Selective growth of high-quality 3C-SiC using a SiO 2 sacrificial-layer technique

Author： Eickhoff M.   Moller H.   Rapp M.   Kroetz G.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.345, Iss.2, 1999-05, pp. : 197-199

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