Room temperature oxidation of Cu/Si 0.76 Ge 0.24 annealed at 200 to 300 o C

Author： Chang C.Y.   Shih P.S.   Luo J.-S.   Lin W.-T.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.346, Iss.1, 1999-06, pp. : 207-211

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