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By Liu P.T.   Chang T.C.   Sze S.M.   Pan F.M.   Mei Y.J.   Wu W.F.   Tsai M.S.   Dai B.T.   Chang C.Y.   Shih F.Y.   Huang H.D.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 345-350

Elsevier

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Elimination of O 2 plasma damage of low-k methyl silsesquioxane film by As implantation

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Thin Solid Films, Vol. 397, Iss. 1, 2001-10 ,pp. : 90-94

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Enhancing the thermal stability of low dielectric constant hydrogen silsesquioxane by ion implantation

By Chang T.C.   Chou M.F.   Mei Y.J.   Tsang J.S.   Pan F.M.   Wu W.F.   Tsai M.S.   Chang C.Y.   Shih F.Y.   Huang  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 351-355

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Fracture toughness, adhesion and mechanical properties of low-K dielectric thin films measured by nanoindentation

By Volinsky A.A.   Vella J.B.   Gerberich W.W.  

Thin Solid Films, Vol. 429, Iss. 1, 2003-04 ,pp. : 201-210

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Hydrogen distribution between the surface and the bulk of thin nickel film at low temperatures

By Dus R.   Nowicka E.  

Vacuum, Vol. 63, Iss. 1, 2001-07 ,pp. : 249-256

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