Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue-green laser diodes

By Kiriakidis G.   Moschovis K.   Uusimaa P.   Salokatve A.   Pessa M.   Stoemenos J.  

Thin Solid Films, Vol. 360, Iss. 1, 2000-02 ,pp. : 195-204

Elsevier

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Characterization of ZnSe films grown on GaAs substrates with In x Ga l-x As and Al x Ga 1-x As buffer layers

By Luyo-Alvarado J.   Santana-Aranda M.A.   Melendez-Lira M.   Lopez-Lopez M.   Mendez V.H.   Vidal M.A.   Yonezu H.  

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 37-40

Elsevier

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Characterization of transparent aluminium oxide and indium tin oxide layers on polymer substrates

By Henry B.M.   Erlat A.G.   McGuigan A.   Grovenor C.R.M.   Briggs G.A.D.   Tsukahara Y.   Miyamoto T.   Noguchi N.   Niijima T.  

Thin Solid Films, Vol. 382, Iss. 1, 2001-02 ,pp. : 194-201

Elsevier

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Nanoindentation of GaAs compliant substrates

By Patriarche G.   Le Bourhis E.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 80, Iss. 12, 2000-12 ,pp. : 2899-2911

Taylor & Francis Ltd

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Characteristics of AlN buffer layers for GaAs epitaxial growths on MnZn ferrite substrates

By Hirato K.   Fujioka H.   Ito S.   Ohta J.   Oshima M.  

Thin Solid Films, Vol. 435, Iss. 1, 2003-07 ,pp. : 131-134

Elsevier

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